DocumentCode
1082116
Title
Influences of interfacial recombination on oscillation characteristics of InGaAsP/InP DH lasers
Author
Yano, Mitsuhiro ; Nishi, Hiroshi ; Takusagawa, Masashito
Author_Institution
Fujitsu Labs., Ltd., Nakahara-ku, Kawasaki, Japan
Volume
16
Issue
6
fYear
1980
fDate
6/1/1980 12:00:00 AM
Firstpage
661
Lastpage
667
Abstract
This paper presents the influences of interfacial recombination on the oscillation characteristics of InGaAsP/InP DH lasers. The effects of interfacial recombination at the two InP-InGaAsP interfaces, and a theoretical study of the oscillation characteristics such as threshold current density and differential quantum efficiency are discussed and compared with experimental results. The effects of interfacial recombination on the temperature dependence of threshold current are also examined.
Keywords
Charge carrier processes; Gallium materials/lasers; Laser thermal factors; Semiconductor device thermal factors; Carrier confinement; Current density; DH-HEMTs; Indium phosphide; Laser theory; Radiative recombination; Spontaneous emission; Temperature dependence; Threshold current; Velocity measurement;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1980.1070537
Filename
1070537
Link To Document