DocumentCode :
1082134
Title :
White noise of MOS transistors operating in weak inversion
Author :
Reimbold, G. ; Gentil, P.
Author_Institution :
Laboratoire de Physique des Composants a Semiconducteurs, Grenoble Cedex, France
Volume :
29
Issue :
11
fYear :
1982
fDate :
11/1/1982 12:00:00 AM
Firstpage :
1722
Lastpage :
1725
Abstract :
A theory is given for the thermal noise of MOS transistors in the weak inversion regime. For MOS transistors with low surface-state density, the relation for the thermal noise in saturation is shown to be the same as a shot noise relation. The theory is compared with measurements and the origin of the white noise in MOST´s operating in weak inversion is discussed.
Keywords :
CMOS technology; Density measurement; Electron mobility; MOSFETs; Noise level; Noise measurement; Semiconductor device noise; Thermal conductivity; Voltage; White noise;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.21016
Filename :
1482513
Link To Document :
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