Title :
Micro-Raman/Infrared Temperature Monitoring of Gunn Diodes
Author :
Hopper, Richard H. ; Oxley, Christopher H. ; Pomeroy, James W. ; Kuball, Martin
Author_Institution :
De Montfort Univ., Leicester
fDate :
4/1/2008 12:00:00 AM
Abstract :
Temperature measurements have been made on Gunn diode samples, using both infrared (IR) and micro-Raman spectroscopy. Micro-Raman spectroscopy was used to give high-resolution temperature measurements on the active transit region of the Gunn diode. These were directly compared with IR thermal measurements made across the mesa region and also on the metallized top contact of the diode.
Keywords :
Gunn diodes; Raman spectra; infrared spectra; temperature measurement; Gunn Diodes; infrared spectroscopy; infrared temperature monitoring; micro-Raman spectroscopy; microRaman temperature monitoring; temperature measurements; Gallium arsenide; Gold; Gunn devices; Infrared spectra; Infrared surveillance; Semiconductor diodes; Spatial resolution; Spectroscopy; Temperature measurement; Temperature sensors; Access resistance; gallium nitride; high-electron mobility transistor (HEMT); infrared (IR) microscopy; phonon scattering; saturation current; velocity field relationship;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.916709
