DocumentCode
1082163
Title
Correlation between substrate and gate currents in MOSFET´s
Author
Tam, Simon ; Ko, Ping-Keung ; Hu, Chenming ; Muller, Richard S.
Author_Institution
University of California, Berkeley, CA
Volume
29
Issue
11
fYear
1982
fDate
11/1/1982 12:00:00 AM
Firstpage
1740
Lastpage
1744
Abstract
A correlation between substrate and gate currents in MOSFET´s is described and analyzed. Both of these currents are the result of hot-electron mechanisms. Theory for these mechanisms has been applied to derive an expression for gate current in terms of substrate current and parameters that can be calculated from processing data and bias conditions. The theory is successfully applied to a series of n-channel MOSFET´s with a range of geometries and bias values.
Keywords
Channel hot electron injection; Current measurement; Degradation; Electron traps; Geometry; Laboratories; MOSFET circuits; Physics; Threshold voltage; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.21019
Filename
1482516
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