Title :
Persistent Current Reduction in Metal-Semiconductor FETs With a ZnCoO Channel in an External Magnetic Field
Author :
Kaspar, Tim ; Fiedler, J. ; Skorupa, Ilona ; Burger, Danilo ; Mucklich, A. ; Fritzsche, Martin ; Schmidt, Oliver G. ; Schmidt, Heidemarie
Author_Institution :
Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden, Germany
Abstract :
Transparent metal-semiconductor field-effect transistors (MESFETs) with a ZnCoO channel have been fabricated by pulsed laser deposition on c-plane sapphire substrates at a temperature of 550°C. The paramagnetic properties have been confirmed by magnetotransport measurements on undepleted ZnCoO films without Schottky gate contacts. The Au/AgxO Schottky gate contacts were processed by optical lithography and metallization. Below 50 K, the MESFET characteristics are persistently changed from a low resistance state (LRS) to high resistance state by an external magnetic field. The MESFET can be switched back into the LRS only by heating it up to room temperature.
Keywords :
Schottky gate field effect transistors; cobalt compounds; galvanomagnetic effects; gold; integrated circuit metallisation; magnetic fields; photolithography; pulsed laser deposition; silver compounds; zinc compounds; Au-AgxO; LRS; MESFET characteristics; Schottky gate contacts; ZnCoO; c-plane sapphire substrates; current reduction; external magnetic field; high resistance state; low resistance state; magnetotransport measurements; optical lithography; optical metallization; paramagnetic properties; pulsed laser deposition; temperature 293 K to 298 K; temperature 550 degC; transparent metal-semiconductor field-effect transistors; undepleted films; Gold; Logic gates; MESFETs; Magnetic semiconductors; Magnetic switching; Resistance; Zinc oxide; Bound magnetic polaron; magnetic channel; metal-semiconductor field-effect transistor (MESFET); s-d exchange;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2278538
