Title :
The effect of parasitic capacitances on the circuit speed of GaAs MESFET ring oscillators
Author :
Chang, Christopher T M ; Namordi, Mooshi R. ; White, William A.
Author_Institution :
Texas Instruments, Inc., Dallas, TX
fDate :
11/1/1982 12:00:00 AM
Abstract :
Circuit parasitic capacitances for GaAs ring oscillators (RO´s) were calculated and used for SPICE2 circuit simulation. The simulated delays agreed with the measured data to within ∼10 percent. The results indicate that the effect of the circuit parasitic capacitances are dominant in determining circuit speed for high-density IC´s at the microwave frequency.
Keywords :
Circuit simulation; Delay; Gallium arsenide; High speed integrated circuits; MESFET circuits; Microwave circuits; Microwave frequencies; Microwave integrated circuits; Parasitic capacitance; Ring oscillators;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.21030
