Title :
Wide bandwidth multiple quantum well 1.55 mu m lasers
Author :
Lealman, I.F. ; Bagley, M. ; Cooper, Diana Marina ; Fletcher, Nick ; Harlow, M. ; Perrin, S.D. ; Walling, R.H. ; Westbrook, L.D.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
6/20/1991 12:00:00 AM
Abstract :
Wide bandwidth 1.55 mu m wavelength InP/InGaAsP multiple quantum well Fabry-Perot lasers with large numbers of wells are reported. Devices were fabricated with low capacitance atmospheric MOVPE grown Fe-InP current blocking layers. A CW 3 dB bandwidth of 17 GHz at 20 degrees C was obtained for a device with 16 wells.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.55 micron; 17 GHz; 20 degC; Fabry-Perot lasers; InGaAsP-InGaAs:Zn; InP:Fe; atmospheric MOVPE grown; broadband operation; current blocking layers; low capacitance layers; multiple quantum well; semiconductor lasers; sideband type; wide bandwidth type;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910742
