A new analysis of the threshold voltage for non-uniform ion-implant MOSFET´s

An analysis for the threshold voltage of MOSFET´s with a Gaussian ion-implant profile is presented. Two parameters xpand xb, which characterize the peak location and the spread of a Gaussian profile, can be arbitrarily adjusted such that even a deeply ion-implanted device can be simulated. The theory predicts a good agreement with available experimental data collected from transistors with a wide range of process parameters and also confirms the so-called anomalous short-channel effect recently observed by Nishida and Onodera [3].