DocumentCode :
1082364
Title :
Noise in short n+-n--n+GaAs diodes
Author :
Peczalski, Andrzej ; Van Der Ziel, Aldert ; Hollis, Mark A.
Author_Institution :
University of Minnesota, Minneapolis, MN
Volume :
29
Issue :
12
fYear :
1982
fDate :
12/1/1982 12:00:00 AM
Firstpage :
1837
Lastpage :
1839
Abstract :
Noise measurements in a short, near-ballistic, n+-n--n+GaAs diode are reported. The device had a linear characteristic below 100 mA. It showed 
noise at low frequencies and a white noise close to the thermal noise of the device conductance 
at high frequencies. The noise is most likely mobility fluctuation noise; we evaluated Hooge\´s parameter α and found a value of 1.95 × 10-6at room temperature and 0.959 × 10-6at liquid nitrogen temperature. We also observed a noise spectrum turning over into 0.5spectrum at 77 K.
noise at low frequencies and a white noise close to the thermal noise of the device conductance at high frequencies. The noise is most likely mobility fluctuation noise; we evaluated Hooge\´s parameter α and found a value of 1.95 × 10-6at room temperature and 0.959 × 10-6at liquid nitrogen temperature. We also observed a noise spectrum turning over into 0.5spectrum at 77 K.Keywords :
Diodes; Fluctuations; Frequency; Gallium arsenide; Low-frequency noise; Nitrogen; Noise measurement; Temperature; Thermal conductivity; White noise;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.21038
Filename :
1482535
Link To Document :
