Title :
High-modal gain 1300-nm In(Ga)As-GaAs quantum-dot lasers
Author :
Salhi, A. ; Martiradonna, L. ; Visimberga, G. ; Tasco, V. ; Fortunato, L. ; Todaro, M.T. ; Cingolani, R. ; Passaseo, A. ; De Vittorio, M.
Author_Institution :
Nat. Nanotechnology Lab. of CNR-INFM, Lecce
Abstract :
A semiconductor laser containing seven InAs-InGaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 mum were fabricated and tested. A high modal gain of 41 cm-1 was obtained at room temperature corresponding to a modal gain of ~6 cm-1 per QD layer, which is very promising to enable the realization of 1.3-mum ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-mum-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm2 and 67%, respectively
Keywords :
III-V semiconductors; current density; gallium arsenide; ground states; indium compounds; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; optical testing; quantum dot lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1.3 mum; 120 mum; 1300 nm; 360 mum; 67 percent; In(Ga)As-GaAs quantum-dot lasers; InGaAs-GaAs; ground state lasing; internal quantum efficiency; modal gain; molecular beam epitaxy; ridge-waveguide lasers; transparency current; vertical-cavity surface-emitting lasers; Current density; Land surface temperature; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Semiconductor lasers; Stationary state; Surface emitting lasers; Testing; Vertical cavity surface emitting lasers; In(Ga)As; Quantum dots (QDs); modal gain; semiconductor laser;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.879948
