DocumentCode :
1082508
Title :
Low-Mass PECVD Oxynitride Gas Chromatographic Columns
Author :
Agah, Masoud ; Wise, Kensall D.
Author_Institution :
Virginia Polytech. Inst. & State Univ., Blacksburg
Volume :
16
Issue :
4
fYear :
2007
Firstpage :
853
Lastpage :
860
Abstract :
This paper describes the realization of low-power micro gas chromatography columns for portable gas analysis systems. The columns are fabricated using complimentary metal-oxide-semiconductor-compatible buried-channel plasma- enhanced chemical vapor deposition oxynitride films that have nearly zero stress at room temperature, high deposition rate (~1 mum/min), high etch rate selectivity (~1:80), low thermal conductivity (< 5 W/mdegC), and low thermal stress (< 140 kPa/degC). The buried channel process utilizes these films to form 25-cm-long 65-mum-ID semicircular columns on a 6-mm-square chip. With more than 5000 theoretical plates, these columns separate multicomponent gas mixtures with performance comparable to that of commercial fused silica capillary columns. The columns are capable of multisecond analyses when integrated with low-dead-volume injectors and dissipate less than 10 mW at 150degC in vacuum.
Keywords :
CMOS integrated circuits; chromatography; gas mixtures; gas sensors; plasma CVD; MEMS; buried channel process; buried-channel plasma-enhanced chemical vapor deposition oxynitride films; commercial fused silica capillary columns; complimentary metal-oxide-semiconductor; gas chromatographic columns; gas sensing; high deposition rate; high etch rate selectivity; low thermal conductivity; low thermal stress; low-mass PECVD oxynitride; low-power micro gas chromatography columns; multicomponent gas mixtures; portable gas analysis systems; semicircular columns; separation column; silicon oxynitride; Chemical vapor deposition; Conductive films; Etching; Gas chromatography; Plasma applications; Plasma chemistry; Plasma temperature; Silicon compounds; Thermal conductivity; Thermal stresses; Buried channel; complimentary metal–oxide–semiconductor (CMOS) compatible; micro gas chromatography (GC); microelectromechanical systems (MEMS); separation column; silicon oxynitride (SiON);
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2007.893515
Filename :
4285630
Link To Document :
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