Direct comparison of the electron-temperature model with the particle-mesh (Monte-Carlo) model for the GaAs MESFET

Characteristics of a Schottky-barrier GaAs MESFET are calculated using the electron-temperature (ET) model, and the results are compared directly with previous particle-mesh computer models using Monte-Carlo techniques. Agreement is better than for any previous two-dimensional model and, in particular, the earlier field-dependent (FD) model is shown to predict much less current because of the neglect of velocity overshoot effects.