Title :
Laser-induced breakdown in crystalline and amorphous SiO2
Author :
Soileau, M.J. ; Bass, M.
Author_Institution :
Michelson Laboratory, Naval Weapons Center, China Lake, CA, USA
fDate :
8/1/1980 12:00:00 AM
Abstract :
The 1.06 μm breakdown thresholds of crystalline and amorphous SiO2were compared. These materials showed dependences of the breakdown threshold on the focal volume which are consistent with a multiphoton-assisted electron avalanche damage mechanism.
Keywords :
Dielectric radiation effects; Laser radiation effects; Quartz materials/devices; Silicon materials/devices; Amorphous materials; Crystalline materials; Crystallization; Electric breakdown; Laser modes; Lenses; Monitoring; Optical materials; Optical scattering; Silicon compounds;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1980.1070577
