Title :
Direct observation of the gate Oxide electric field distribution in Silicon MOSFET´s
Author :
Frye, R.C. ; Leamy, H.J.
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey, USA
fDate :
1/1/1982 12:00:00 AM
Abstract :
The charge collected within the SiO2layer of an MOS capacitor during bombardment with kilovolt electrons is approximately proportional to the field in the oxide. We have used this proportionality to form SEM images of the field distribution in MOSFET channels.
Keywords :
Electrodes; Electron beams; Electron traps; Geometry; Helium; MOS capacitors; MOSFET circuits; Scanning electron microscopy; Silicon; Spontaneous emission;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25452
