• DocumentCode
    1082588
  • Title

    Analytical Model of Amorphous Layer Thickness Formed by High-Tilt-Angle As Ion Implantation

  • Author

    Suzuki, Kunihiro ; Tada, Yoko ; Kataoka, Yuji ; Kawamura, Kazuo ; Nagayama, Tsutomu

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi
  • Volume
    55
  • Issue
    4
  • fYear
    2008
  • fDate
    4/1/2008 12:00:00 AM
  • Firstpage
    1080
  • Lastpage
    1084
  • Abstract
    We previously proposed a compact model of amorphous layer thickness over a wide range of ion implantation conditions using a vertical ion implantation profile parameter database. We also proposed a new parameter for the through dose. We extended the model to any tilt angle for ion implantation using one more parameter for the lateral straggling of the ion implantation profile.
  • Keywords
    amorphous semiconductors; ion implantation; amorphous layer thickness; high-tilt-angle; lateral straggling; vertical ion implantation profile parameter database; Amorphous materials; Analytical models; Databases; Helium; Impurities; Ion implantation; Laboratories; Solids; Substrates; Transmission electron microscopy; Amorphous; ion implantation; tilt;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.916714
  • Filename
    4457827
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082588