• DocumentCode
    1082599
  • Title

    Capacitance calculations in MOSFET VLSI

  • Author

    Elmasry, M.I.

  • Author_Institution
    Burroughs Corporation, San Diego, CA, USA
  • Volume
    3
  • Issue
    1
  • fYear
    1982
  • fDate
    1/1/1982 12:00:00 AM
  • Firstpage
    6
  • Lastpage
    7
  • Abstract
    A simple empirical relation for the calculation of the capacitance of interconnection lines in MOSFET VLSI, including edge effects, is presented. The equation gives approximate results compared to two-dimensional computer calculations.
  • Keywords
    Annealing; Capacitance; Conductive films; Conductors; Electrons; Gallium arsenide; MOSFET circuits; Oxidation; Silicon; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25454
  • Filename
    1482559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082599