Title :
New dynamic RAM Cell for VLSI memories
Author :
Tsuchiya, T. ; Itsumi, M.
Author_Institution :
Musashino Electrical Communication Laboratory, Musashino, Tokyo, Japan
fDate :
1/1/1982 12:00:00 AM
Abstract :
A novel high-alpha-particle-immunity and high-density dynamic RAM cell with readout signal gain is proposed. The cell is composed of a MOSFET for charge transfer, a MOS capacitor for charge storage and a junction FET (JFET) with buried channel under the MOS capacitor. The buried channel is dynamically switched according to whether there is charge-storage or not. The cell has extremely small collection efficiency for charges generated by alpha-particles, and allows a large amount of leakage charges due to its peculiar structure. Thus, it can achieve high packing density.
Keywords :
Charge transfer; DRAM chips; Electrons; Equivalent circuits; MOS capacitors; MOSFET circuits; Random access memory; Read-write memory; Very large scale integration; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25455
