Title :
Measurement of MOSFET constants
Author :
De La Moneda, F.H. ; Kotecha, H.N. ; Shatzkes, M.
Author_Institution :
IBM General Products Division, Tucson, AZ
fDate :
1/1/1982 12:00:00 AM
Abstract :
A method is described to electrically determine MOSFET channel length, mobility, gate-bias dependence and parasitic series resistance. These four quantities are obtained by curve fitting output resistance measurements over a range of gate biases and channel lengths. Measurements from two gate biases on each of two devices of different channel lengths are sufficient to obtain a full characterization. Thus, the method is well suited for automated testing because of its simplicity and efficiency.
Keywords :
DRAM chips; Density measurement; Electric resistance; Electrical resistance measurement; Electron devices; Length measurement; MOSFET circuits; Random access memory; Semiconductor memory; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25456
