Title :
A Combined Modulation of Set Current With Reset Voltage to Achieve 2-bit/cell Performance for Filament-Based RRAM
Author :
Fang Yuan ; Zhigang Zhang ; Liyang Pan ; Jun Xu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A combined operation scheme to realize multibit switching in filament-based bipolar RRAM device is proposed. By combining the modulations of the current compliance in set operations with the stop voltage in reset operations together, the size or the quantity of the filaments in the film bulk can be controlled. An RRAM device with the structure of Ag/HfOx/Pt is fabricated and the 2-bit/cell memory function is achieved by the proposed modulation. Furthermore, the 2-bit/cell data reliability is satisfactory including the high-temperature retention, cycling endurance.
Keywords :
bipolar memory circuits; hafnium compounds; platinum; random-access storage; silver; Ag; HfOx; Pt; combined modulation; combined operation scheme; current compliance; cycling endurance; data reliability; filament-based bipolar RRAM device; high-temperature retention; multibit switching; Films; Hafnium compounds; Nonvolatile memory; Performance evaluation; Random access memory; Reliability; Resistance; Multibit; combined modulation; conducting filament; current compliance (CC); reset voltage; resistive switching;
Journal_Title :
Electron Devices Society, IEEE Journal of the
DOI :
10.1109/JEDS.2014.2342738
