Title :
The intrinsic frequency response of 1.3-/spl mu/m InGaAsN lasers in the range T=10/spl deg/C-80/spl deg/C
Author :
Anton, O. ; Xu, L.F. ; Patel, D. ; Menoni, C.S. ; Yeh, J.Y. ; Van Roy, T.T. ; Mawst, L.J. ; Tansu, N.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO
Abstract :
Optical modulation response experiments above threshold are carried out in ridge waveguide InGaAs and InGaAsN (N=0.5%) in a temperature span of 10 degC-80 degC. The modulation traces are analyzed with a complete rate equation model that allows extraction of the resonance frequency and damping that are intrinsic to the carrier and photon processes occurring in the laser active region. This analysis enables calculation of the K-factor and its temperature behavior. K-values for InGaAsN lasers are larger and show a more pronounced dependence on temperature than in InGaAs lasers. This behavior is ascribed to a decrease in the effective differential gain with nitrogen content
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical modulation; quantum well lasers; ridge waveguides; wide band gap semiconductors; 1.3 mum; 10 to 80 degC; InGaAsN; InGaAsN laser; K-factor; effective differential gain; optical modulation; rate equation model; ridge waveguide; Equations; Frequency response; Indium gallium arsenide; Laser modes; Optical modulation; Optical waveguides; Resonance; Resonant frequency; Temperature distribution; Waveguide lasers; 3-dB bandwidth; InGaAsN quantum-well (QW) lasers; modulation response;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.880701
