Characteristics of an In0.53Ga0.47As very shallow junction gate structure grown by molecular beam epitaxy

We demonstrate an In0.53Ga0.47As very shallow (80 ∼ 700 Å) junction gate structure grown by molecular beam epitaxy (MBE). This structure allows the fabrication of submicron devices with simple processing steps. Study of the electrical characteristics suggests that this structure should be useful for both normally-on and normally-off field effect transistor (FET) applications. An FET structure utilizing this gate structure is also proposed.