Title :
InGaAsP-InP dual-wavelength bipolar cascade lasers
Author :
Yan, Jingzhou ; Cai, Jianxin ; Ru, Guoyun ; Yu, Xiuqin ; Fan, J. ; Choa, Fow-Sen
Author_Institution :
Maryland Univ., Baltimore, MD
Abstract :
We report the demonstration of an InGaAsP-InP-based dual-wavelength bipolar cascade laser. Simultaneous dual-wavelength (1350 and 1450 nm) output at room temperature using pulsed excitation is achieved by epitaxially connecting two different active regions with a low area specific resistance (~10-4 Omegacm2) InAlAs-InP hetero-tunnel-junction. By connecting more active regions together, ultrabroadband gain materials may be obtained
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; 1350 nm; 1450 nm; InAlAs-InP; InAlAs-InP heterotunnel-junction; InGaAsP-InP; InGaAsP-InP dual-wavelength bipolar cascade laser; pulsed excitation; specific resistance; ultrabroadband gain material; Doping; Indium phosphide; Joining processes; Laser modes; Optical interferometry; Optical materials; Quantum cascade lasers; Quantum well devices; Temperature; Waveguide lasers; Bipolar cascade laser (BCL); broadband gain material; dual-wavelength laser; tunnel junction (TJ);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.880772
