Title :
The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K
Author :
Windhorn, T.H. ; Cook, L.W. ; Stillman, G.E.
Author_Institution :
University of Illinois at Urbana-Champaign, Urbana, IL
fDate :
1/1/1982 12:00:00 AM
Abstract :
Electron drift velocities in n-type In0.53Ga0.47As have been measured at 300 K using a microwave time-of-flight technique at electric field strengths from about 10 kV/cm to 104 kV/cm. The electron velocity-field characteristic for n-type In0.53Ga0.47As exhibits a larger negative differential mobility and a lower high field velocity than is obtained with GaAs.
Keywords :
Electric variables measurement; Electron mobility; Gallium arsenide; Indium phosphide; Microwave measurements; Microwave theory and techniques; Ohmic contacts; Substrates; Temperature; Velocity measurement;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25459
