• DocumentCode
    1082640
  • Title

    The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K

  • Author

    Windhorn, T.H. ; Cook, L.W. ; Stillman, G.E.

  • Author_Institution
    University of Illinois at Urbana-Champaign, Urbana, IL
  • Volume
    3
  • Issue
    1
  • fYear
    1982
  • fDate
    1/1/1982 12:00:00 AM
  • Firstpage
    18
  • Lastpage
    20
  • Abstract
    Electron drift velocities in n-type In0.53Ga0.47As have been measured at 300 K using a microwave time-of-flight technique at electric field strengths from about 10 kV/cm to 104 kV/cm. The electron velocity-field characteristic for n-type In0.53Ga0.47As exhibits a larger negative differential mobility and a lower high field velocity than is obtained with GaAs.
  • Keywords
    Electric variables measurement; Electron mobility; Gallium arsenide; Indium phosphide; Microwave measurements; Microwave theory and techniques; Ohmic contacts; Substrates; Temperature; Velocity measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25459
  • Filename
    1482564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082640