• DocumentCode
    1082659
  • Title

    New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region

  • Author

    Susa, Nobuhiko ; Nakagome, Hiroshi ; Mikami, Osamu ; Ando, Hiroaki ; Kanbe, Hiroshi ; Susa, N. ; Nakagome, Hideki ; Mikami, Osamu ; Ando, Hideki ; Kanbe, H.

  • Author_Institution
    NTT Public Corporation, Musashino-shi, Tokyo, Japan
  • Volume
    16
  • Issue
    8
  • fYear
    1980
  • fDate
    8/1/1980 12:00:00 AM
  • Firstpage
    864
  • Lastpage
    870
  • Abstract
    Low dark current and low multiplication noise properties for an In0.53Ga0.47As/InP avalanche photodiode are described. The diode is prepared with an In0.53Ga0.47As light absorption layer and an InP avalanche multiplication region. The lowest dark current density of 5.2 \\times 10^{-4} A/cm2is obtained at 90 percent of a breakdown voltage. Multiplication noise power is proportional to the 2.7th power of the current multiplication factor. Impact ionization coefficient by holes is larger by 2-3 times than that by electrons in
  • Keywords
    Absorption; Avalanche photodiodes; Dark current; Diodes; Electrons; Germanium; Indium gallium arsenide; Indium phosphide; Masers; Optical interferometry;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1980.1070588
  • Filename
    1070588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082659