DocumentCode :
1082659
Title :
New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region
Author :
Susa, Nobuhiko ; Nakagome, Hiroshi ; Mikami, Osamu ; Ando, Hiroaki ; Kanbe, Hiroshi ; Susa, N. ; Nakagome, Hideki ; Mikami, Osamu ; Ando, Hideki ; Kanbe, H.
Author_Institution :
NTT Public Corporation, Musashino-shi, Tokyo, Japan
Volume :
16
Issue :
8
fYear :
1980
fDate :
8/1/1980 12:00:00 AM
Firstpage :
864
Lastpage :
870
Abstract :
Low dark current and low multiplication noise properties for an In0.53 Ga0.47 As/InP avalanche photodiode are described. The diode is prepared with an In0.53 Ga0.47 As light absorption layer and an InP avalanche multiplication region. The lowest dark current density of 
A/cm2is obtained at 90 percent of a breakdown voltage. Multiplication noise power is proportional to the 2.7th power of the current multiplication factor. Impact ionization coefficient by holes is larger by 2-3 times than that by electrons in
A/cm2is obtained at 90 percent of a breakdown voltage. Multiplication noise power is proportional to the 2.7th power of the current multiplication factor. Impact ionization coefficient by holes is larger by 2-3 times than that by electrons inKeywords :
Absorption; Avalanche photodiodes; Dark current; Diodes; Electrons; Germanium; Indium gallium arsenide; Indium phosphide; Masers; Optical interferometry;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1980.1070588
Filename :
1070588
Link To Document :
