DocumentCode
1082660
Title
A high aspect-ratio 0.1 micron gate technique for low-noise MESFET´S
Author
Chao, P.C. ; Ku, W.H. ; Nulman, J.
Author_Institution
Cornell University, Ithaca, NY
Volume
3
Issue
1
fYear
1982
fDate
1/1/1982 12:00:00 AM
Firstpage
24
Lastpage
26
Abstract
A new technique, using optical lithography, has been developed to produce very thick submicron gates. This technique has produced Al gates 900Å long and 1.7µm thick, for an aspect-ratio (gate thickness/gate length) of ∼ 19. Using this high aspect-ratio gate structure, GaAs MESFET´s have been fabricated with gate lengths as short as 0.1µm and widths as wide as 300µm. Gate resistances of 17Ω/mm and 37Ω/mm of gate width have been measured for half-micron and quarter-micron long Al gates, respectively.
Keywords
Artificial intelligence; Chaos; Electrical resistance measurement; Gallium arsenide; Lithography; MESFETs; Metallization; Optical films; Resists; Student members;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1982.25461
Filename
1482566
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