DocumentCode
1082680
Title
A New Light Source for EUV Lithography
Author
Das, Sunil R.
Volume
45
Issue
3
fYear
2008
fDate
3/1/2008 12:00:00 AM
Firstpage
14
Lastpage
14
Abstract
A new type of X-ray laser could give hope to the semiconductor industry as it struggles to continue its march toward miniaturization. This next-generation chip-making tool was developed at the National Science Foundation´s Engineering Research Center for Extreme Ultraviolet Science and Technology, located at Colorado State University, in Fort Collins.The laser operates at wavelengths of 18.9 and 13.9 nanometers, the latter fine enough for extreme ultraviolet (EUV) lithography, which will be needed to manufacture the generation of chips that are to become available around 2011.
Keywords
X-ray lithography; laser beam applications; ultraviolet lithography; ultraviolet sources; EUV lithography; X-ray laser; extreme ultraviolet lithography; light source; miniaturization; next-generation chip-making tool; semiconductor industry; wavelength 13.9 mm; wavelength 18.9 nm; Light sources; Lithography; Optical amplifiers; Optical pulse generation; Optical pulses; Plasma waves; Power lasers; Pulse amplifiers; Ultraviolet sources; X-ray lasers;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.2008.4457837
Filename
4457837
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