Title :
Injection locking characteristics of an AlGaAs semiconductor laser
Author :
Kobayashi, Soichi ; Kimura, Tatsuya
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Masashinoshi, Tokyo, Japan
fDate :
9/1/1980 12:00:00 AM
Abstract :
Injection locking of an AlGaAs double-heterostructure laser was studied with respect to locking frequency width and locking gain. The relation of the locking bandwidth versus the ratio of locked laser to injected power was consistent with the analysis on injection locking phenomena by Adler. Measured maximum locking bandwidth was 3 GHz, when locking gain was 23 dB. The 40 dB maximum gain was observed with the 500 MHz locking bandwidth. By measuring the beat notes between two temperature-stabilized free running AlGaAs lasers, the linewidth was estimated as 10 MHz.
Keywords :
Gallium materials/lasers; Injection-locked oscillators; Bandwidth; Fiber lasers; Frequency; Injection-locked oscillators; Laser mode locking; Laser modes; Laser tuning; Optical feedback; Optical mixing; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1980.1070595
