DocumentCode :
1082732
Title :
Alpha-particle-induced field and enhanced collection of carriers
Author :
Hu, C.
Author_Institution :
University of California, Berkeley, CA
Volume :
3
Issue :
2
fYear :
1982
fDate :
2/1/1982 12:00:00 AM
Firstpage :
31
Lastpage :
34
Abstract :
A simple physical model explains all the characteristics of the newly discovered funnelling phenomenon. An alpha strike results in significant field in the quasi-neutral regions to a depth that is equal to 1 + µ 
/µ 
times the depletion region width of an n+/p junction. This and the predicted current waveform agree with experiments and simulation results. The model also predicts the effects of the angle of alpha incidence, and that p+/n junctions should exhibit weaker funnelling phenomenon.
/µ times the depletion region width of an n+/p junction. This and the predicted current waveform agree with experiments and simulation results. The model also predicts the effects of the angle of alpha incidence, and that p+/n junctions should exhibit weaker funnelling phenomenon.Keywords :
Charge carrier processes; Computer simulation; Current density; Doping; Equations; Geometry; Photovoltaic cells; Predictive models; Semiconductor process modeling; Silicon;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1982.25467
Filename :
1482572
Link To Document :
