Title :
1.50 μm CW operation of GaInNAs/GaAs laser diodes grown by MOCVD
Author :
Yokozeki, M. ; Mitomo, J. ; Sato, Y. ; Hino, T. ; Narui, H.
Author_Institution :
Mater. Labs., Sony Corp., Atsugi, Japan
Abstract :
Room-temperature continuous-wave operation of a 1.5 μm range GaInNAs laser grown by metal organic chemical vapour deposition is reported. The lasing wavelength of the GaInNAs/GaAs double quantum well laser was 1.50 μm and the threshold current was 245 mA. The characteristic temperature between 10 and 50°C was about 119 K under pulse operation.
Keywords :
III-V semiconductors; MOCVD coatings; gallium arsenide; indium compounds; optical waveguides; quantum well lasers; ridge waveguides; wide band gap semiconductors; 1.50 μm CW operation; 10 to 50 degC; 245 mA; 293 to 298 K; GaInNAs-GaAs; GaInNAs/GaAs double quantum well laser; GalnNAs/GaAs laser diodes growth; MOCVD; lasing wavelength; metal organic chemical vapour deposition; pulse operation; ridge waveguides; room temperature continuous-wave operation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045616
