DocumentCode
1082742
Title
Experimental results on submicron-size p-channel MOSFET´s
Author
Fichtner, W. ; Levin, R.M. ; Taylor, G.W.
Author_Institution
Bell Laboratories, Murray Hill, NJ
Volume
3
Issue
2
fYear
1982
fDate
2/1/1982 12:00:00 AM
Firstpage
34
Lastpage
37
Abstract
We report results on p-channel MOSFET´s with channel lengths as small as 0.5 µm. Using design criteria obtained from numerical simulation, the devices have been fabricated by a low temperature process with very short annealing times. Fabricated devices with submicron channel lengths are dominated by velocity saturation of holes. Comparing the drive capability of n- and p-channel devices, we find the intrinsic device currents to be within a factor of 1.4 for a channel length of 0.5 µm.
Keywords
Annealing; Boron; Circuits; Etching; Implants; Plasma applications; Plasma measurements; Plasma temperature; Very large scale integration; X-ray lithography;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1982.25468
Filename
1482573
Link To Document