• DocumentCode
    1082745
  • Title

    Simulations for the effect of chamber geometry on oxygen plasma characteristics for very large plasma sources

  • Author

    Takechi, Kazushige ; Otsuki, Shigeyoshi

  • Author_Institution
    Technol. Res. Assoc. for Adv. Display Mater., Tokyo
  • Volume
    19
  • Issue
    3
  • fYear
    2006
  • Firstpage
    286
  • Lastpage
    291
  • Abstract
    Using an oxygen discharge model based on diffusion equations, we numerically investigate the effect of chamber geometry on plasma density profiles, especially for very large rectangular high-density plasma chambers. The calculation results show that uniformity of the ion and O-atom density profiles seriously deteriorates when the chamber length increases up to 2 m. We discuss the dependence of the plasma density profiles on the chamber geometry in terms of the relationship between particle generation in the volume and loss at the wall surface. The simulation results indicate that the surface loss at the top and bottom chamber walls dominates the loss at the side walls. The density profiles, therefore, vary, depending on the chamber length even at the same aspect ratio. The simulation results also predict that the uniformity of the density profiles could be significantly improved over the very large area if the plasma were properly confined by using magnetic multipole fields, along with choosing suitable wall materials that influence the particle loss at the surface
  • Keywords
    plasma density; plasma materials processing; plasma simulation; plasma sources; chamber geometry effect; diffusion equations; electron temperature; magnetic multipole fields; oxygen discharge model; oxygen plasma characteristics; particle generation; particle loss; plasma chambers; plasma density profiles; surface loss; very large plasma sources; wall materials; Fault location; Geometry; Magnetic confinement; Magnetic materials; Plasma confinement; Plasma density; Plasma properties; Plasma simulation; Plasma sources; Solid modeling; Diffusion equation; electron temperature; large area plasma source; oxygen plasma; plasma density profile;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2006.879417
  • Filename
    1668228