DocumentCode
1082745
Title
Simulations for the effect of chamber geometry on oxygen plasma characteristics for very large plasma sources
Author
Takechi, Kazushige ; Otsuki, Shigeyoshi
Author_Institution
Technol. Res. Assoc. for Adv. Display Mater., Tokyo
Volume
19
Issue
3
fYear
2006
Firstpage
286
Lastpage
291
Abstract
Using an oxygen discharge model based on diffusion equations, we numerically investigate the effect of chamber geometry on plasma density profiles, especially for very large rectangular high-density plasma chambers. The calculation results show that uniformity of the ion and O-atom density profiles seriously deteriorates when the chamber length increases up to 2 m. We discuss the dependence of the plasma density profiles on the chamber geometry in terms of the relationship between particle generation in the volume and loss at the wall surface. The simulation results indicate that the surface loss at the top and bottom chamber walls dominates the loss at the side walls. The density profiles, therefore, vary, depending on the chamber length even at the same aspect ratio. The simulation results also predict that the uniformity of the density profiles could be significantly improved over the very large area if the plasma were properly confined by using magnetic multipole fields, along with choosing suitable wall materials that influence the particle loss at the surface
Keywords
plasma density; plasma materials processing; plasma simulation; plasma sources; chamber geometry effect; diffusion equations; electron temperature; magnetic multipole fields; oxygen discharge model; oxygen plasma characteristics; particle generation; particle loss; plasma chambers; plasma density profiles; surface loss; very large plasma sources; wall materials; Fault location; Geometry; Magnetic confinement; Magnetic materials; Plasma confinement; Plasma density; Plasma properties; Plasma simulation; Plasma sources; Solid modeling; Diffusion equation; electron temperature; large area plasma source; oxygen plasma; plasma density profile;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2006.879417
Filename
1668228
Link To Document