• DocumentCode
    1082763
  • Title

    Polysilicon oxidation self-aligned MOS (POSA MOS) — A new self-aligned double source/drain ion implantation technique for VLSI

  • Author

    Hsia, S. ; Fatemi, R. ; Teng, T.C. ; Deornellas, S. ; Sun, S.C. ; Skinner, C.

  • Author_Institution
    National Semiconductor, Santa Clara, CA
  • Volume
    3
  • Issue
    2
  • fYear
    1982
  • fDate
    2/1/1982 12:00:00 AM
  • Firstpage
    40
  • Lastpage
    42
  • Abstract
    A new MOS device named polysilicon oxidation self-aligned (POSA) MOS is proposed to enhance device performance for VLSI circuits. The device characteristics revealed significant improvement in hot-electron effects, short-channel effects and punch through voltage.
  • Keywords
    Circuits; Fabrication; Implants; Ion implantation; MOS devices; Oxidation; Plasma temperature; Silicon; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25470
  • Filename
    1482575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082763