Title :
Polysilicon oxidation self-aligned MOS (POSA MOS) — A new self-aligned double source/drain ion implantation technique for VLSI
Author :
Hsia, S. ; Fatemi, R. ; Teng, T.C. ; Deornellas, S. ; Sun, S.C. ; Skinner, C.
Author_Institution :
National Semiconductor, Santa Clara, CA
fDate :
2/1/1982 12:00:00 AM
Abstract :
A new MOS device named polysilicon oxidation self-aligned (POSA) MOS is proposed to enhance device performance for VLSI circuits. The device characteristics revealed significant improvement in hot-electron effects, short-channel effects and punch through voltage.
Keywords :
Circuits; Fabrication; Implants; Ion implantation; MOS devices; Oxidation; Plasma temperature; Silicon; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25470
