• DocumentCode
    1082794
  • Title

    Ion beam damage effects during the low energy cleaning of GaAs

  • Author

    Ghandhi, S.K. ; Kwan, P. ; Bhat, K.N. ; Borrego, J.M.

  • Author_Institution
    Rensselaer Polytechnic Institute, Troy, NY
  • Volume
    3
  • Issue
    2
  • fYear
    1982
  • fDate
    2/1/1982 12:00:00 AM
  • Firstpage
    48
  • Lastpage
    50
  • Abstract
    It is shown that ion-beam damage effects in GaAs are significant, even for low energy ion cleaning (≃ 100 eV). Damage from this process results in increasing the saturation current (extrapolated from the forward current) of Au-n-GaAs Schottky barrier diodes by two orders of magnitude. The depth of damage during this process is shown to be unexpectedly large (900 Å) for these low ion-beam energies.
  • Keywords
    Cleaning; Current density; Etching; Gallium arsenide; Ion beams; Photovoltaic cells; Schottky barriers; Schottky diodes; Substrates; Surface treatment;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25473
  • Filename
    1482578
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082794