• DocumentCode
    1082813
  • Title

    Carrier density dependence of refractive index in AlGaAs semiconductor lasers

  • Author

    Ito, Minoru ; Kimura, Tatsuya

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
  • Volume
    16
  • Issue
    9
  • fYear
    1980
  • fDate
    9/1/1980 12:00:00 AM
  • Firstpage
    910
  • Lastpage
    911
  • Abstract
    Carrier density dependence of the refractive index in the active layers of semiconductor lasers is evaluated from the wavelength shift with increases in current by taking into account effects of the active layer temperature rise and lateral carrier and optical field distributions on the wavelength shift. The derived refractive index change due to carrier density increase is -4 \\times 10^{-27} m3, which is in good agreement with the theoretical value.
  • Keywords
    Charge carrier processes; Gallium materials/lasers; Optical refraction; Charge carrier density; Fabry-Perot; Free electron lasers; Frequency; Optical feedback; Optical refraction; Optical variables control; Refractive index; Semiconductor lasers; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1980.1070603
  • Filename
    1070603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082813