DocumentCode :
1082813
Title :
Carrier density dependence of refractive index in AlGaAs semiconductor lasers
Author :
Ito, Minoru ; Kimura, Tatsuya
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume :
16
Issue :
9
fYear :
1980
fDate :
9/1/1980 12:00:00 AM
Firstpage :
910
Lastpage :
911
Abstract :
Carrier density dependence of the refractive index in the active layers of semiconductor lasers is evaluated from the wavelength shift with increases in current by taking into account effects of the active layer temperature rise and lateral carrier and optical field distributions on the wavelength shift. The derived refractive index change due to carrier density increase is 
m3, which is in good agreement with the theoretical value.
m3, which is in good agreement with the theoretical value.Keywords :
Charge carrier processes; Gallium materials/lasers; Optical refraction; Charge carrier density; Fabry-Perot; Free electron lasers; Frequency; Optical feedback; Optical refraction; Optical variables control; Refractive index; Semiconductor lasers; Temperature dependence;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1980.1070603
Filename :
1070603
Link To Document :
