A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver

Author

Rofougaran, Ahmadreza ; Chang, James Y -C ; Rofougaran, Maryam ; Abidi, Asad A.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

31

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

880

Lastpage

889

Abstract

An integrated low-noise amplifier and downconversion mixer operating at 1 GHz has been fabricated for the first time in 1 μm CMOS. The overall conversion gain is almost 20 dB, the double-sideband noise figure is 3.2 dB, the IIP3 is +8 dBm, and the circuit takes 9 mA from a 3 V supply. Circuit design methods which exploit the features of CMOS well suited to these functions are in large part responsible for this performance. The front-end is also characterized in several other ways relevant to direct-conversion receivers

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF frequency convertors; UHF integrated circuits; UHF mixers; radio receivers; 1 GHz; 1 micron; 20 dB; 3 V; 3.2 dB; 9 mA; CMOS RF front-end IC; IIP3; conversion gain; direct-conversion wireless receiver; double-sideband noise figure; downconversion mixer; integrated circuit design; low-noise amplifier; Band pass filters; Baseband; CMOS integrated circuits; Frequency shift keying; Gallium arsenide; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Semiconductor device noise;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.508199

Filename

508199