• DocumentCode
    1082846
  • Title

    Improved High Temperature Retention for Charge-Trapping Memory by Using Double Quantum Barriers

  • Author

    Yang, H.J. ; Chin, Albert ; Lin, S.H. ; Yeh, F.S. ; McAlister, S.P.

  • Author_Institution
    Nat. Chiao Tung Univ., Hsinchu
  • Volume
    29
  • Issue
    4
  • fYear
    2008
  • fDate
    4/1/2008 12:00:00 AM
  • Firstpage
    386
  • Lastpage
    388
  • Abstract
    We have fabricated the [TaN-Ir3Si]-HfAlO-LaAlO3-Hf0.3O0.5N0.2-HfAlO-SiO2-Si double quantum-barrier charge- trapping memory device. Under fast 100 mus and low plusmn8 V program/erase (P/E) condition, an initial memory window of 2.6 V and good extrapolated ten-year retention window of 1.9 V are achieved at 125degC. Very small P/E retention decays of 64/22 mV/dec at 125degC are measured due to double quantum barriers to confine the charges in deep-trapping-energy Hf0.3O0.5N0.2 well.
  • Keywords
    electron traps; hafnium compounds; lanthanum compounds; random-access storage; silicon compounds; tantalum compounds; charge-trapping memory; deep-trapping-energy; double quantum barriers; high temperature retention; memory window; program/erase condition; Erase; high-$kappa$; high-$kappa$; nonvolatile memory; program;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.917811
  • Filename
    4457861
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082846