Title :
Characterisation of SiO2 transferred GaAs electroabsorption modulator for 850 nm radio over fibre systems based on multimode fibre
Author :
Lethien, C. ; Vilcot, J.-P. ; McMurtry, S. ; Lampin, J.F. ; Vignaud, D. ; Miska, P. ; Decoster, D. ; Mollot, F.
Author_Institution :
Transmanche Centre for Telecommun. Res., Univ. des Sci. et Technol. de Lille, Villeneuve d´´Ascq, France
Abstract :
The fabrication and characterisation of a GaAs based electroabsorption modulator for radio over fibre applications is reported. It is designed to work as a transmission type device for multimode fibre networks at 850 nm wavelength and to act so, it has been transferred to a transparent silica substrate (after complete removal of the GaAs substrate).
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; optical communication equipment; optical fibre networks; radiocommunication; silicon compounds; 850 nm; GaAs; GaAs electroabsorption modulator; GaAs substrate; SiO2; SiO2 transfer; multimode fibre network; optical communication equipment; photoconductivity; photoluminescence; planarisation; radio over fibre systems; sputter etching; transmission type device; transparent silica substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045288
