Title :
Quantum dot infrared photodetector design based on double-barrier resonant tunnelling
Author :
Su, X.H. ; Chakrabarti, S. ; Stiff-Roberts, A.D. ; Singh, J. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
A novel quantum dot infrared photodetector design, based on double-barrier resonant tunnelling, is proposed and demonstrated. Theoretical calculations predict significantly lower dark currents in this device, compared to conventional quantum dot photodetectors. This is borne out of experimental results.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; infrared detectors; photodetectors; resonant tunnelling; semiconductor quantum dots; AlGaAs-GaAs; conventional quantum dot photodetectors; dark currents; double-barrier resonant tunnelling; quantum dot infrared photodetector design;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045206
