DocumentCode :
1082909
Title :
Quantum dot infrared photodetector design based on double-barrier resonant tunnelling
Author :
Su, X.H. ; Chakrabarti, S. ; Stiff-Roberts, A.D. ; Singh, J. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Volume :
40
Issue :
17
fYear :
2004
Firstpage :
1082
Lastpage :
1083
Abstract :
A novel quantum dot infrared photodetector design, based on double-barrier resonant tunnelling, is proposed and demonstrated. Theoretical calculations predict significantly lower dark currents in this device, compared to conventional quantum dot photodetectors. This is borne out of experimental results.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; infrared detectors; photodetectors; resonant tunnelling; semiconductor quantum dots; AlGaAs-GaAs; conventional quantum dot photodetectors; dark currents; double-barrier resonant tunnelling; quantum dot infrared photodetector design;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20045206
Filename :
1327538
Link To Document :
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