A High-Efficiency Class-E GaN HEMT Power Amplifier for WCDMA Applications

Author

Lee, Yong-Sub ; Jeong, Yoon-Ha

Author_Institution

Pohang Univ. of Sci. & Technol., Pohang

Volume

17

Issue

8

fYear

2007

Firstpage

622

Lastpage

624

Abstract

This letter reports a high efficiency class-E power amplifier using a GaN high electron mobility transistor (HEMT), which is designed at WCDMA band of 2.14 GHz. To improve output power and efficiency by suppressing harmonic powers, an output network using transmission lines is used. For a single tone, the proposed output network suppresses all harmonic power levels below -60 dBc for the whole output power range. The peak power-added efficiency (PAE) of 70% with a power gain of 13 dB is achieved at an output power of 43 d Bin. The broadband performance with a power gain over 12 dB and PAE over 60% is maintained through 200 MHz.

Keywords

III-V semiconductors; UHF amplifiers; code division multiple access; gallium compounds; high electron mobility transistors; power amplifiers; transmission lines; wide band gap semiconductors; GaN - Interface; HEMT; WCDMA; class-E power amplifier; frequency 2.14 GHz; frequency 200 MHz; gain 13 dB; harmonic powers; high electron mobility transistor; peak power-added efficiency; transmission lines; Gain; Gallium nitride; HEMTs; High power amplifiers; MODFETs; Multiaccess communication; Power amplifiers; Power generation; Power system harmonics; Power transmission lines; Class-E power amplifier (PA); gallium nitride (GaN) high electron mobility transistor (HEMT); harmonic termination; power-added efficiency (PAE); switching-mode amplifier;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.901803

Filename

4285673