DocumentCode :
1082946
Title :
A mask-programmable CCD digital memory
Author :
Nash, J.G.
Author_Institution :
Hughes Research Laboratories, Malibu, CA
Volume :
3
Issue :
4
fYear :
1982
fDate :
4/1/1982 12:00:00 AM
Firstpage :
77
Lastpage :
79
Abstract :
A mask-programmable digital CCD memory circuit has been designed, fabricated, and tested. This circuit uses a special, double implantation of impurities of opposite types into the region underneath selected storage electrodes to achieve nonvolatility. A 54-bit CCD, fabricated using standard p-channel MOS technology, was used to demonstrate restoration of lost data.
Keywords :
Charge coupled devices; Charge transfer; Circuit testing; Clocks; Electrodes; Electrons; Implants; Impurities; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1982.25486
Filename :
1482591
Link To Document :
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