• DocumentCode
    1082946
  • Title

    A mask-programmable CCD digital memory

  • Author

    Nash, J.G.

  • Author_Institution
    Hughes Research Laboratories, Malibu, CA
  • Volume
    3
  • Issue
    4
  • fYear
    1982
  • fDate
    4/1/1982 12:00:00 AM
  • Firstpage
    77
  • Lastpage
    79
  • Abstract
    A mask-programmable digital CCD memory circuit has been designed, fabricated, and tested. This circuit uses a special, double implantation of impurities of opposite types into the region underneath selected storage electrodes to achieve nonvolatility. A 54-bit CCD, fabricated using standard p-channel MOS technology, was used to demonstrate restoration of lost data.
  • Keywords
    Charge coupled devices; Charge transfer; Circuit testing; Clocks; Electrodes; Electrons; Implants; Impurities; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25486
  • Filename
    1482591
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1082946