Title :
New read-out mode in light-sensitive floating gate MOS Memory
Author :
Ando, T. ; Yamasaki, H.
Author_Institution :
Shizuoka University, Hamamatsu, Japan
fDate :
4/1/1982 12:00:00 AM
Abstract :
A novel pulse read out operation in a light-sensitive floating gate MOS memory was studied experimentally. In this proposed operating mode, a floating source, pulsed gate voltage, and bias lighting are essential. It was found that both the positively and negatively modulated read signals for a same light input were obtained. The feature leads to an optical memory in which subtraction and correlation are realized.
Keywords :
Image sensors; Insulation; Intelligent sensors; Nonvolatile memory; Optical imaging; Optical modulation; Optical pulses; Optical sensors; Threshold voltage; Writing;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25488