DocumentCode
1082963
Title
New read-out mode in light-sensitive floating gate MOS Memory
Author
Ando, T. ; Yamasaki, H.
Author_Institution
Shizuoka University, Hamamatsu, Japan
Volume
3
Issue
4
fYear
1982
fDate
4/1/1982 12:00:00 AM
Firstpage
83
Lastpage
85
Abstract
A novel pulse read out operation in a light-sensitive floating gate MOS memory was studied experimentally. In this proposed operating mode, a floating source, pulsed gate voltage, and bias lighting are essential. It was found that both the positively and negatively modulated read signals for a same light input were obtained. The feature leads to an optical memory in which subtraction and correlation are realized.
Keywords
Image sensors; Insulation; Intelligent sensors; Nonvolatile memory; Optical imaging; Optical modulation; Optical pulses; Optical sensors; Threshold voltage; Writing;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1982.25488
Filename
1482593
Link To Document