• DocumentCode
    1082963
  • Title

    New read-out mode in light-sensitive floating gate MOS Memory

  • Author

    Ando, T. ; Yamasaki, H.

  • Author_Institution
    Shizuoka University, Hamamatsu, Japan
  • Volume
    3
  • Issue
    4
  • fYear
    1982
  • fDate
    4/1/1982 12:00:00 AM
  • Firstpage
    83
  • Lastpage
    85
  • Abstract
    A novel pulse read out operation in a light-sensitive floating gate MOS memory was studied experimentally. In this proposed operating mode, a floating source, pulsed gate voltage, and bias lighting are essential. It was found that both the positively and negatively modulated read signals for a same light input were obtained. The feature leads to an optical memory in which subtraction and correlation are realized.
  • Keywords
    Image sensors; Insulation; Intelligent sensors; Nonvolatile memory; Optical imaging; Optical modulation; Optical pulses; Optical sensors; Threshold voltage; Writing;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25488
  • Filename
    1482593