Title :
Palladium-silicide Schottky-barrier IR-CCD for SWIR applications at intermediate temperatures
Author :
Elabd, H. ; Villani, T. ; Kosonocky, W.
Author_Institution :
RCA Laboratories, Princeton, NJ
fDate :
4/1/1982 12:00:00 AM
Abstract :
A new 32 × 63 element palladium-silicide Schottky-barrier IR-CCD device is described. The device can be operated from 40 to 140K and is sensitive in the 1.0 to 3.5 µm SWIR spectral range. A typical value of the quantum efficiency coefficient is 19.1%/eV. The photoelectric barrier height is 0.34 eV.
Keywords :
Charge coupled devices; Current measurement; Dark current; Detectors; Optical imaging; Registers; Schottky barriers; Sensor arrays; Space technology; Temperature sensors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25490
