Title :
Carrier injection and backgating effect in GaAs MESFET´s
Author :
Lee, C.P. ; Lee, S.J. ; Welch, B.M.
Author_Institution :
Rockwell International, Thousand Oaks, CA
fDate :
4/1/1982 12:00:00 AM
Abstract :
The relation between the backgating effects on GaAs MESFET´s and current conduction in the semi-insulating substrate is studied. The onset voltage of the backgating effect is found to coincide with the trap-fill-limited voltage for the substrate conduction. This observation implies that carrier injection in the substrate is directly related to the backgating effect.
Keywords :
Dielectric substrates; Electrodes; FETs; Gallium arsenide; Implants; MESFETs; Ohmic contacts; Space charge; Testing; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25493
