• DocumentCode
    1083016
  • Title

    Carrier injection and backgating effect in GaAs MESFET´s

  • Author

    Lee, C.P. ; Lee, S.J. ; Welch, B.M.

  • Author_Institution
    Rockwell International, Thousand Oaks, CA
  • Volume
    3
  • Issue
    4
  • fYear
    1982
  • fDate
    4/1/1982 12:00:00 AM
  • Firstpage
    97
  • Lastpage
    98
  • Abstract
    The relation between the backgating effects on GaAs MESFET´s and current conduction in the semi-insulating substrate is studied. The onset voltage of the backgating effect is found to coincide with the trap-fill-limited voltage for the substrate conduction. This observation implies that carrier injection in the substrate is directly related to the backgating effect.
  • Keywords
    Dielectric substrates; Electrodes; FETs; Gallium arsenide; Implants; MESFETs; Ohmic contacts; Space charge; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25493
  • Filename
    1482598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083016