Trap studies in GaInP/GaAs and AlGaAs/GaAs HEMT´s by means of low-frequency noise and transconductance dispersion characterizations

The presence of traps in GaInP/GaAs and AlGaAs/GaAs HEMT´s was investigated by means of low frequency noise and frequency dispersion measurements. Low frequency noise measurements showed two deep traps (E _a1=0.58 eV, E_a2=0.27 eV) in AlGaAs/GaAs HEMT´s. One of them (E_a2) is responsible for the channel current collapse at low temperature. A deep trap (E_a1´=0.52 eV) was observed in GaInP/GaAs HEMT´s only at a much higher temperature (~350 K). These devices showed a transconductance dispersion of ~16% at 300 K which reduced to only ~2% at 200 K. The dispersion characteristics of AlGaAs/GaAs HEMT´s were very similar at 300 K (~12%) but degraded at 200 K (~20%). The low frequency noise and the transconductance dispersion are enhanced at certain temperatures corresponding to trap level crossing by the Fermi-level. The transition frequency of 1/f noise is estimated at 180 MHz for GaInP/GaAs HEMT´s and resembles that of AlGaAs/GaAs devices