Title :
Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors
Author :
Yang, Y.F. ; Hsu, C.C. ; Yang, E.S.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
5/1/1994 12:00:00 AM
Abstract :
The behavior of the surface recombination current was examined in InGaP/GaAs heterostructure-emitter bipolar transistors (HEBT´s) with both exposed GaAs surface and InGaP passivated surface based on the emitter-size effect on current gain. The results indicate that the GaAs surface recombination current has a 1 kT-like dependence in the high current regime and a 2 kT-like dependence in the low current regime which is similar to published experimental results in AlGaAs/GaAs and InGaP/GaAs HBT´s. The surface recombination current in devices with an InGaP passivation layer has an order of magnitude lower value in low current regime and more than two orders lower in high current regime than that in devices with exposed GaAs surface
Keywords :
III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; 1 kT-like dependence; 2 kT-like dependence; HBT; HEBT; InGaP passivated surface; InGaP-GaAs; current gain; emitter-size effect; exposed GaAs surface; heterostructure-emitter bipolar transistors; high current regime; low current regime; passivation layer; surface recombination current; Bipolar transistors; Carrier confinement; Composite materials; Computer aided analysis; Conducting materials; Current density; Gallium arsenide; Heterojunction bipolar transistors; Passivation; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
