High-performance GaAs metal insulator semiconductor transistor

Proton bombardment techniques have been used to fabricate GaAs metal insulator semiconductor transistors (MIST´s) with good thermal stability and radiation hardened performance. Highly stable insulator layers have been obtained using both single-species (H1+) and multiple-species (H1+, H2+, O+, and OH+) beams. The device processing is compatible with fabrication of GaAs FET devices in monolithic circuits.