Characterization of monolithic n-type 6H-SiC piezoresistive sensing elements

Author

Shor, Joseph S. ; Bemis, Leala ; Kurtz, Anthony D.

Author_Institution

Kulite Semicond. Products Inc., Leonia, NJ, USA

Volume

41

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

661

Lastpage

665

Abstract

Monolithic, junction isolated piezoresistors have been fabricated in commercially available 6H-SiC. The gauge factor (GF) of these elements has been measured up to 250°C in both longitudinal and transverse configurations. The maximum GF observed was -29.3, corresponding to the piezoresistive coefficient π₁₁. A beam transducer with a four-arm integral piezoresistor network was fabricated and tested in a force sensor configuration. The data indicate that, n-type 6H-SiC has the potential to be useful in high temperature electromechanical sensors to measure parameters such as pressure, force, strain and acceleration

Keywords

electric sensing devices; force measurement; piezoelectric semiconductors; piezoelectric transducers; semiconductor materials; silicon compounds; 250 C; 6H-SiC; SiC; beam transducer; force sensor configuration; four-arm integral piezoresistor network; gauge factor; high temperature electromechanical sensors; junction isolated piezoresistors; longitudinal and transverse configuration; monolithic sensor; n-type semiconductor; piezoresistive coefficient; piezoresistive sensing elements; transverse configuration; Electromechanical sensors; Force measurement; Force sensors; Piezoresistance; Piezoresistive devices; Pressure measurement; Strain measurement; Temperature sensors; Testing; Transducers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.285013

Filename

285013