Effects of AC hot carrier stress on n- and p-MOSFET´s with oxynitride gate dielectrics

Author

Joshi, A.B. ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

41

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

671

Lastpage

674

Abstract

Effects of AC hot carrier stress on n- and p-MOSFET´s with pure, NH₃-nitrided (RTN) and reoxidized nitrided (RTN/RTO) gate oxides are studied. Irrespective of the gate dielectric used, n-MOSFET´s show enhanced degradation but p-MOSFET´s show suppressed degradation under AC stress as compared to DC stress for the same duration. Dependence of degradation on frequency and duty cycle of gate pulse is studied. Results show that the degradation under AC stress in n-MOSFET´s is suppressed whereas it is increased slightly in p-MOSFET´s with the use of RTN/RTO gate oxides instead of conventional gate oxides

Keywords

dielectric thin films; hot carriers; insulated gate field effect transistors; nitridation; oxidation; reliability; semiconductor device testing; thermal stresses; AC hot carrier stress; DC stress; NH₃; NH₃-nitrided gate oxides; RTN/RTO gate oxides; duty cycle; enhanced degradation; gate dielectric; gate pulse frequency; n-MOSFET´s; oxynitride gate dielectrics; p-MOSFET´s; reoxidized nitrided gate oxides; suppressed degradation; Degradation; Dielectrics; Electron traps; Frequency; Hot carriers; Interface states; Inverters; MOSFET circuits; Thermal stresses; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.285015

Filename

285015