• DocumentCode
    1083141
  • Title

    1.3 µm LPE- and VPE-grown InGaAsP edge-emitting LED́s

  • Author

    Olsen, Gregory H. ; Hawrylo, Frank Z. ; Channin, Donald J. ; Botez, Dan ; Ettenberg, M.

  • Author_Institution
    Sensors Unlimited. Inc., Princeton, NJ, USA
  • Volume
    17
  • Issue
    10
  • fYear
    1981
  • fDate
    10/1/1981 12:00:00 AM
  • Firstpage
    2130
  • Lastpage
    2134
  • Abstract
    Comparably high performance has been obtained from both vapor-phase and liquid-phase epitaxy InGaAsP/InP 1.3 μm edge-emitting LED´s. Best results include 135 μW of optical power coupled into a 50 μm core 0.2 NA graded-index fiber, spectral half-widths ∼600 Å, rise/fall times ∼2 ns, ac modulation rates ∼200 MHz, and reliable operation in excess of 17 000 h @70°C and 3000 h @120°C. Asymmetries in the far-field patterns of these devices are also discussed.
  • Keywords
    Light-emitting diodes (LED´s); Epitaxial growth; Fiber lasers; Gold; Indium phosphide; Metallization; Optical coupling; Optical fiber devices; Optical transmitters; Stimulated emission; Zinc;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1981.1070635
  • Filename
    1070635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083141