• DocumentCode
    1083146
  • Title

    Determination of built-in-potential in N-I-P a-Si:H solar cells

  • Author

    Han, M.-K. ; Sung, P. ; Anderson, W.A.

  • Author_Institution
    State University of New York at Buffalo, Amherst, NY
  • Volume
    3
  • Issue
    5
  • fYear
    1982
  • fDate
    5/1/1982 12:00:00 AM
  • Firstpage
    121
  • Lastpage
    124
  • Abstract
    This paper describes a simple method to evaluate built-in-potential of P-N junction a-Si:H solar cells. Built-in-potential (Vbi) was calculated from photovoltage-current characteristics at various temperature and illumination levels. Results from two independent, experimental techniques agree extremely well. Vbi= 1.02 eV ± 0.02 eV was obtained for a N-I-P cell having Voc= 650 mV under AM1 illumination.
  • Keywords
    Capacitance-voltage characteristics; Glow discharges; Lighting; P-n junctions; Photovoltaic cells; Schottky diodes; Semiconductor diodes; Space charge; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25506
  • Filename
    1482611
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083146